**HMC536LP2ETR: A Comprehensive Guide to the GaAs pHEMT MMIC Low-Noise Amplifier**

The **HMC536LP2ETR** stands as a premier solution in the realm of high-frequency electronics, representing a state-of-the-art **GaAs pHEMT MMIC Low-Noise Amplifier (LNA)**. Designed to meet the rigorous demands of modern microwave systems, this component is critical for applications where signal integrity and minimal added noise are paramount. Its core architecture leverages Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) technology, which is renowned for its superior high-frequency performance and excellent noise characteristics.

Operating over a broad frequency range from **5 GHz to 20 GHz**, the HMC536LP2ETR is exceptionally versatile. It provides a high gain of **17 dB** and an impressively low noise figure of **2.5 dB**, ensuring that even the weakest signals are amplified with minimal degradation. This makes it an ideal choice for sensitive receiver paths in satellite communication systems, point-to-point radio links, military radar, and sophisticated test and measurement equipment. The amplifier is housed in a compact, RoHS-compliant **4x4 mm LP2 leadless package**, facilitating easy integration into space-constrained designs while ensuring reliable performance under various environmental conditions.

One of the defining features of this MMIC LNA is its **unconditional stability**, achieved through an internal matching network that simplifies board-level design by minimizing the need for external components. It requires a single positive supply voltage, typically between +3V to +5V, and incorporates RF ports that are internally matched to 50 Ohms, further streamlining the integration process. The device also exhibits high linearity, with an output IP3 of +25 dBm, allowing it to handle strong interfering signals without significant distortion.

**ICGOOODFIND:** The HMC536LP2ETR is a high-performance, broadband GaAs pHEMT Low-Noise Amplifier that excels in providing high gain and a low noise figure across the 5 to 20 GHz spectrum. Its robust design, ease of integration, and exceptional microwave characteristics make it an indispensable component for advancing high-frequency communication and sensing systems.

**Keywords:** GaAs pHEMT, Low-Noise Amplifier, Microwave Amplifier, MMIC, Broadband LNA