Infineon ISC011N03L5S: A High-Performance OptiMOS 5 30V Power MOSFET

In the realm of power electronics, efficiency, power density, and thermal performance are paramount. Addressing these critical demands, Infineon Technologies introduces the ISC011N03L5S, a standout member of its advanced OptiMOS™ 5 30V family. This power MOSFET is engineered to set a new benchmark for performance in a compact footprint, making it an ideal solution for a wide array of demanding applications.

The cornerstone of the ISC011N03L5S's superiority is its exceptionally low on-state resistance (R DS(on)) of just 1.1 mΩ (max. @ V GS = 10 V). This ultra-low resistance is a game-changer, as it directly translates to minimized conduction losses. When a MOSFET is in its on-state, power is dissipated as heat proportional to R DS(on) and the square of the current (I²R). By drastically reducing this value, the ISC011N03L5S operates with significantly higher efficiency, leading to cooler operation and reduced need for extensive heat sinking.

This efficiency boost is further amplified by outstanding switching performance. The device features low gate charge (Q G) and figures of merit like R DS(on) Q G that are optimized for high-frequency operation. This allows power supply designers to push switching frequencies higher without incurring prohibitive switching losses. The result is the ability to design smaller, more power-dense systems, as higher frequencies permit the use of smaller passive components like inductors and capacitors.

Housed in a SuperSO8 package, the ISC011N03L5S achieves this high performance in a very small form factor. This package is not only compact but also offers superior thermal characteristics compared to standard SO-8 packages, enabling effective heat dissipation from the die to the printed circuit board. This makes it exceptionally suitable for space-constrained applications where board real estate is at a premium.

The combination of these features makes the ISC011N03L5S exceptionally versatile. It is the perfect component for:

Synchronous rectification in switch-mode power supplies (SMPS) and DC-DC converters.

Motor control and drive circuits in industrial automation, robotics, and drones.

Battery management systems (BMS), including protection switches and load switches.

High-current point-of-load (POL) converters for advanced computing and server applications.

ICGOOODFIND: The Infineon ISC011N03L5S exemplifies the pinnacle of power MOSFET technology, offering designers a potent combination of ultra-low R DS(on), superior switching speed, and excellent thermal performance in a miniaturized SuperSO8 package. It is a critical enabler for creating the next generation of highly efficient, compact, and powerful electronic systems.

Keywords: OptiMOS 5, Low R DS(on), Power Efficiency, SuperSO8, Synchronous Rectification