Infineon IRF5210PBF P-Channel Power MOSFET Datasheet and Application Overview

The Infineon IRF5210PBF is a robust P-Channel Power MOSFET engineered using advanced process technology to achieve excellent on-state resistance and superior switching performance. This high-voltage MOSFET is designed for a wide range of power management and switching applications, offering designers a reliable solution for efficient circuit control.

A primary highlight of the IRF5210PBF is its low static drain-to-source on-resistance (RDS(on)) of just 0.06 Ω, which is critical for minimizing conduction losses and improving overall system efficiency. The device is rated for a maximum drain-source voltage (VDS) of -100 V and a continuous drain current (ID) of -20 A, making it suitable for medium to high-power circuits such as in power supplies, motor controls, and DC-DC converters. The P-Channel configuration is particularly advantageous in applications where a high-side switch is needed and simplifying the drive circuit is desired, as it can be controlled directly by a microcontroller or logic-level signal when using a pull-down resistor.

The TO-220AB package ensures effective thermal performance, allowing the device to handle significant power dissipation when mounted on a heatsink. Key parameters from the datasheet, including a low gate threshold voltage (VGS(th)) and high avalanche ruggedness, underscore its reliability in harsh environments. Designers must pay close attention to the safe operating area (SOA) and ensure the gate-source voltage (VGS) does not exceed the ±20 V limit to prevent damage.

Typical applications include use in load and battery switching systems, polarity protection circuits, and as a solid-state replacement for mechanical relays. Its fast switching characteristics also make it a candidate for pulse-width modulation (PWM) controllers.

ICGOOODFIND: The Infineon IRF5210PBF stands out as a highly efficient and versatile P-Channel MOSFET, combining low RDS(on), high voltage capability, and a robust package ideal for a variety of power switching designs.

Keywords: Power MOSFET, P-Channel, Low RDS(on), High-Side Switch, TO-220 Package