Infineon SMBTA42E6327: High-Voltage NPN Transistor in SOT-23 Package

Release date:2025-11-05 Number of clicks:143

Infineon SMBTA42E6327: High-Voltage NPN Transistor in SOT-23 Package

The Infineon SMBTA42E6327 is a high-performance NPN bipolar junction transistor (BJT) engineered for high-voltage switching and amplification applications. Encased in the industry-standard SOT-23 surface-mount package, this component is a critical solution for designers seeking to maximize power capability within a minimal footprint. Its primary role is to control large voltages and currents using a much smaller input signal, making it indispensable in a wide array of modern electronic circuits.

A defining characteristic of the SMBTA42E6327 is its exceptional high-voltage capability. It boasts a collector-emitter voltage (VCEO) of 300 V and a collector-base voltage (VCBO) of 300 V, allowing it to operate reliably in environments where significant voltage spikes or sustained high voltages are present. This makes it particularly suited for offline power supplies, switching regulators, and electronic ballasts for lighting, where handling mains-level voltages is a fundamental requirement.

Despite its miniature size, the transistor is designed for robust performance. The SOT-23 package offers a perfect balance between compactness and thermal/electrical performance, enabling high-density PCB designs. Furthermore, the device features a continuous collector current (IC) of 500 mA, providing sufficient output drive for many auxiliary circuits, relay drivers, and load switches. Its performance is characterized by good saturation characteristics, ensuring low power loss during the on-state, which is crucial for improving overall system efficiency.

The SMBTA42E6327 is also known for its high current gain, which is optimized across a range of collector currents. This ensures effective signal amplification with minimal input current, enhancing the sensitivity and efficiency of the driving circuit. For design engineers, this translates to greater flexibility in designing the base drive circuitry, often allowing for the use of lower-cost, lower-power driver ICs.

In application, this transistor is frequently deployed as a key switching element in power management subsystems. It is also commonly used for signal inversion and amplification in audio stages and various control interfaces. Its high-voltage robustness provides a critical safety margin, enhancing the long-term reliability and durability of the end product.

ICGOODFIND: The Infineon SMBTA42E6327 stands out as an exceptionally reliable and compact high-voltage switch. Its 300V voltage rating, combined with a 500mA current capability in a tiny SOT-23 package, makes it an superior choice for space-constrained power management and amplification designs, ensuring both performance and board-level efficiency.

Keywords: High-Voltage Switching, SOT-23 Package, NPN Transistor, Power Management, 300V VCEO

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